DTL15N10

DTU15N10/DTL15N10 N-Channel 100 V (D-S) MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V TO-251 ID (A) 15 15 FEATURES TrenchFET® Power MOSFETS 175 °C Junction Temperature 100 % Rg Tested APPLICATIONS Primary Side Switch TO-252 D GDS Top View GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAR Repetitive Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAR Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 15 8.7 45 15 15 11.3 62b 2.7a - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-t...