Power MOSFET
DTP4N6/DTP4N6F/DTU4N6/DTL4N6
www.din-tek.jp
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (n...
Description
DTP4N6/DTP4N6F/DTU4N6/DTL4N6
www.din-tek.jp
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
48 12 19 Single
2.9
FEATURES
Low Gate Charge Qg Results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance and Avalanche Voltage and Current
Compliant to RoHS directive 2002/95/EC
TO-220AB
TO-220 FULLPAK
TO-252
TO-251
D
GD S Top View
GDS Top View
GDS Top View
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC ...
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