DTL4N80

DTP4N80/DTP4N80F/DTU4N80/DTL4N80 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 19 4 9 Single 3.2 FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB TO-220 FULLPAK TO-252 TO-251 D G GD S Top View GDS Top View GDS Top View GDS Top View DTP4N80DTP4N80FDTU4N80DTL4N80 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation P...