DTL60N03

N-Channel 30-V (D-S) MOSFET DTL60N03 www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0058 at VGS = 10 V 0.0097 at VGS = 4.5 V TO-251 ID (A)a, g 60g 60g Qg (Typ.) 30 nC D G FEATURES Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested APPLICATIONS Low-Side Switch for DC/DC Converters - Servers - POL - VRM OR-ing RoHS COMPLIANT GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25 °C VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IDM IS IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recomme...