DTL80N03

N-Channel 30-V (D-S) MOSFET DTL80N03 www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0031 at VGS = 10 V 0.0051 at VGS = 4.5 V TO-251 ID (A)a, e 80 80 Qg (Typ) 82 nC D FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU APPLICATIONS OR-ing Server DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 80a, e 80e 28.8b, c 27b, c 240 36 64.8 80a, e 3.13b, c 200a 12...