N-Channel MOSFET
N-Channel 100 V (D-S) MOSFET
DTM1030
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.187 at VGS = 10 V
ID ...
Description
N-Channel 100 V (D-S) MOSFET
DTM1030
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.187 at VGS = 10 V
ID (A)a 3
Qg (Typ.) 7.3 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
DC/DC Conversion - Notebook System Power
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM IAR EAR
Power Dissipation B
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±30 3.0 2.5 12 3
12.8
2
1.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ ...
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