DTM1604

DTM1604 www.din-tek.jp /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) VGS = 10 V 15 3 6 Configuration Single 1.4 FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junct...