DTM4420B

N-Channel 30-V (D-S) MOSFET DTM4420B www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at V GS= 10 V 0.009 at VGS = 4.5 V ID (A)a 15 13 Qg (Typ.) 6.8 nC FEATURES Halogen-free TrenchFET® Power MOSFET Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit 30 ±...