BC559B

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors Order this document by BC559/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC559, B, C BC560C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC559 –30 –30 –5.0 –100 625 5.0 1.5 12 – 55 to +150 BC560 –45 –50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 V(BR)EBO ICBO — — IEBO — — — — –15 –5.0 –15 nAdc µAdc nAdc –30 –50 –5.0 — — — — — — Vdc –30 –45 — — — — Vdc Vdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC559, B, ...