Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC618/D
Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2
BC618
EMITTER 3
1 2 3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 17 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 55 80 12 — — — — — — — — — — — — 50 50 50 Vdc Vdc Vdc nAdc nAdc nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC618
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Collector – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) Base – Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) DC Current Gain (IC = 100 µA, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) VCE(sat) VBE(sat) hFE 2000 4000 10000 4000 — — — — — — 50000 — — — — — 1.1 1.6 Vdc Vdc —
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) fT Cob Cib 150 — — — 4.5 5.0 — 7.0 9.0 MHz pF pF
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC618
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 en, NOISE VOLTAGE (nV) 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 µA 10 10 µA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 µA
100 µA
1.0 mA 10
1.0
2.0
5.0
.