Document
1N5518B THRU 1N5546B
SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT
±5% TOLERANCE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD TJ, Tstg
400 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
Type
Zener Voltage VZ @ IZT
MIN NOM MAX
VVV
Test Current
IZT mA
Maximum Zener
Impedance (Note 1)
ZZT @ IZT
Ω
Maximum Reverse Current
IR @ VR μA V
1N5518B 3.135 3.3
3.465
20
26 5.0 1.0
1N5519B 3.420 3.6
3.780
20
24 3.0 1.0
1N5520B 3.705 3.9
4.095
20
22 1.0 1.0
1N5521B 4.085 4.3
4.515
20
18 3.0 1.5
1N5522B 4.465 4.7
4.935
10
22 2.0 2.0
1N5523B 4.845 5.1 5.355 5.0
26 2.0 2.5
1N5524B 5.320 5.6 5.880 3.0
30 2.0 3.5
1N5525B 5.890 6.2 6.510 1.0
30 1.