1N5533B

1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX VVV Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.135 3.3 3.465 20 26 5.0 1.0 1N5519B 3.420 3.6 3.780 20 24 3.0 1.0 1N5520B 3.705 3.9 4.095 20 22 1.0 1.0 1N5521B 4.085 4.3 4.515 20 18 3.0 1.5 1N5522B 4.465 4.7 4.935 10 22 2.0 2.0 1N5523B 4.845 5.1 5.355 5.0 26 2.0 2.5 1N5524B 5.320 5.6 5.880 3.0 30 2.0 3.5 1N5525B 5.890 6.2 6.510 1.0 30 1...