DTM5410

N-Channel 40-V (D-S) MOSFET DTM5410 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0065 at VGS = 10 V 0.0079 at VGS = 4.5 V ID (A)a 18 14.5 Qg (Typ.) 8 nC FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 40 ± 20 18 13.5 12b, c 9.6b, c 50 4.5 2.2b, c 20 20 5 3....