DTM8002

Dual N-Channel 20 V MOSFET '70 ZZZGLQWHNMS PRODUCT SUMMARY VDS (V) 20 RDS(on) (:) 0.0095 at VGS = 4.5 V 0.0113 at VGS = 2.5 V ID (A) 11a 9 Qg (Typ.) 14.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET“Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC (6'3URWHFWHG.9+%0 TSSOP8 Top View Bottom View Pin 1 D1/D2 S1 S1 G1 1 2 3 4 D 8 D1/D2 7 S2 6 S2 5 G2 G G S D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C VGS ID TA = 70 °C Pulsed Drain Current (10 μs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current TC = 25 °C TA = 25 °C IDM IS ISM Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C IAS EAS PD O...