DTP10N80

DTP10N80/DTP10N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 47 Qgs (nC) Qgd (nC) 11 20 Configuration Single 0.91 TO-220AB TO-220 FULLPAK FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting D G GD S Top View GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche E...