DTP16N65SJ

DTP16N65SJ www.din-tek.jp N-Channel 650 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 122 21 37 Single 0.345 TO-247AC D S D G G S N-Channel MOSFET FEATURES Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) APPLICATIONS Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VGS Continuous Drain Current (TJ = 150 °C) Pulsed ...