BC638

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC636/D High Current Transistors PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER BC636 BC638 BC640 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 636 –45 –45 BC 638 –60 –60 –5.0 –0.5 625 5.0 1.5 12 – 55 to +150 BC 640 –80 –80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage* (IC = –10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO — — — — –100 –10 nAdc µAdc –45 –60 –80 –5.0 — — — — — — — — Vdc –45 –60 –80 — — — — — — Vdc Vdc Collector – Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = 125°C) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Moto...