50V - 1000V Glass Passivated Rectifier
1N5400G-K – 1N5408G-K
Taiwan Semiconductor
3A, 50V - 1000V Standard Rectifier
FEATURES
● Glass passivated chip junctio...
Description
1N5400G-K – 1N5408G-K
Taiwan Semiconductor
3A, 50V - 1000V Standard Rectifier
FEATURES
● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● Low power loss, high efficiency ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● General purpose
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
3
A
50 - 1000 V
IFSM TJ MAX Package
125
A
150
°C
DO-201AD
Configuration
Single die
MECHANICAL DATA
● Case: DO-201AD ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 1.20g (approximately)
DO-201AD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
1N
1N
1N
1N
1N
PARAMETER
SYMBOL 5400 5401 5402 5404 5406
Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value
VRRM VR(RMS)
G-K 1N 5400G
50
G-K 1N 5401G
100
G-K 1N 5402G
200
G-K 1N 5404G
400
G-K 1N 5406G
600
35
70
140
280
420
Forward current
IF
3
Surge peak forward
current, 8.3ms single half sine wave superimposed
IFSM
125
on rated load
Junction temperature
TJ
-55 to +150
Storage temperature
TSTG
-55 to +150
1N 5407 G-K
1N 5407G
800
560
1N 5408 UNIT G-K
1N 5408G 1000 V
700 V A
A
°C °C
1
Version: C2105
1N5400G-K – 1N5408G-K
Taiwan Semiconductor
THERMAL PE...
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