DTQ3608

N-Channel 60 V (D-S) MOSFET DTQ3608 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0113 at VGS = 10 V 0.0143 at VGS = 4.5 V ID (A)a, e 38 33 DFN 3x3 EP Top View Bottom View Qg (Typ.) 53 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Notebook PC Core VRM/POL D Top View 18 27 36 45 G Pin 1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 38a, e 30e 15b, c 12.2b, c 114 26 50.2 38a, e 20b, c 31.2 20 ...