DTQ6300

N-Channel 30 V (D-S) MOSFET DTQ6300 www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0017 at VGS = 10 V 0.0024 at VGS = 4.5 V ID (A)a, e 130 100 Qg (Typ.) 85 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS DC/DC Converter Synchronous Rectification Top View DFN5X6 Bottom View Top View 18 27 36 45 D G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 130a, e 100e 35b, c 31b, c 380 84.8 600 90a, e 9.1...