DTQ6404

N-Channel 40 V (D-S) MOSFET DTQ6404 www.din-tek.jp PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.0047 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A)a, e 70 65 Qg (Typ.) 67 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Notebook PC Core VRM/POL Top View DFN5X6 Bottom View Top View 18 27 36 45 D G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 40 ± 20 70a, e 60e 19b, c 18.6b, c 210 21 47.2 70a, e 2.36b, c 200a 135 3.15b,...