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DTQ6602 Dataheets PDF



Part Number DTQ6602
Manufacturers Din-Tek
Logo Din-Tek
Description N-Channel MOSFET
Datasheet DTQ6602 DatasheetDTQ6602 Datasheet (PDF)

N-Channel 60 V (D-S) MOSFET DTQ6602 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0025 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a, e 150 130 Qg (Typ.) 88 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook PC Core • VRM/POL Top View DFN5X6 Bottom View Top View 18 27 36 45 D G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC .

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N-Channel 60 V (D-S) MOSFET DTQ6602 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0025 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a, e 150 130 Qg (Typ.) 88 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook PC Core • VRM/POL Top View DFN5X6 Bottom View Top View 18 27 36 45 D G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 150a, e 130e 25b, c 22.8b, c 580 32 250 150a, e 4.68b, c 210a 155 5.


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