AM2520P3C03-P22 Phototransistor
DESCRIPTION
z Made with NPN silicon phototransistor chips
FEATURES
z Subminiature packag...
AM2520P3C03-P22 Photo
transistor
DESCRIPTION
z Made with
NPN silicon photo
transistor chips
FEATURES
z Subminiature package z Gull wing lead z Mechanically and spectrally matched to the infrared
emitting LED lamp z Package: 1000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant
APPLICATIONS
z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology
PACKAGE DIMENSIONS
RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1)
Confidential
ABSOLUTE MAXIMUM RATINGS at TA=25°C
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change
without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications.
Parameter
Max.Ratings
Units
Collector-to-Emitter Voltage
30
Emitter-to-Collector Voltage
5
Power Dissipatio...