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AP1608P1C-P22

Kingbright

Phototransistor

AP1608P1C-P22 1.6 x 0.8 mm Phototransistor DESCRIPTION z Made with silicon phototransistor chips FEATURES z 1.6 mm x 0.8...


Kingbright

AP1608P1C-P22

File Download Download AP1608P1C-P22 Datasheet


Description
AP1608P1C-P22 1.6 x 0.8 mm Phototransistor DESCRIPTION z Made with silicon phototransistor chips FEATURES z 1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS Confidential RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 Emitter-to-Collector Voltage Power Dissipa...




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