BC807-16W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 1999 May 18 Philips Semiconductors Product specification PNP general purpose transistor FEATURES High current (max. 500 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complement: BC817W. MARKING TYPE NUMBER BC807W BC807-16W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 5D∗ 5A∗ TYPE NUMBER BC807-25W BC807-40W MARKING CODE(1) 5B∗ 5C∗ 1 Top view 2 MAM048 BC807W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base; IC = −10 mA open collector − − − − − − − −65 − −65 MIN. MAX. −50 −45 −5 −500 −1 −200 200 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 May 18 2 Philips Semiconductors Product specification PNP general purpose transistor THE...