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BC807-40 Dataheets PDF



Part Number BC807-40
Manufacturers NXP
Logo NXP
Description PNP Transistor
Datasheet BC807-40 DatasheetBC807-40 Datasheet (PDF)

BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NXP BC807 SOT23 BC807W SOT323 BC327[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). NPN complement BC817 BC817W BC337 1.2 Features „ High current „ Low voltage 1.3 Applications „ Genera.

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BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NXP BC807 SOT23 BC807W SOT323 BC327[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). NPN complement BC817 BC817W BC337 1.2 Features „ High current „ Low voltage 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC807; BC807W; BC327 IC = −100 mA; VCE = −1 V BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC327-25 BC807-40; BC807-40W; BC327-40 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - −45 V - - −500 mA - - −1 A [1] 100 - 600 100 - 250 160 - 400 250 - 600 NXP Semiconductors 2. Pinning information Table 3. Pin SOT23 1 2 3 Pinning Description base emitter collector SOT323 1 2 3 base emitter collector SOT54 1 2 3 emitter base collector SOT54A 1 2 3 emitter base collector SOT54 variant 1 emitter 2 base 3 collector BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Simplified outline Symbol 3 1 2 3 1 2 sym013 3 1 2 sot323_so 3 1 2 sym013 1 2 3 001aab347 3 2 1 006aaa149 1 2 3 001aab348 3 2 1 006aaa149 1 2 3 001aab447 3 2 1 006aaa149 BC807_BC807W_BC327_6 Product data sheet Rev. 06 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 2 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 3. Ordering information 4. Marking Table 4. Ordering information Type number[1] Package Name Description Version BC807 - plastic surface mounted package; 3 leads SOT23 BC807W SC-70 plastic surface mounted package; 3 leads SOT323 BC327[2] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). Table 5. Marking codes Type number BC807 BC807-16 BC807-25 BC807-40 BC807W BC807-16W BC807-25W BC807-40W BC327 BC327-16 BC327-25 BC327-40 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] 5D* 5A* 5B* 5C* 5D* 5A* 5B* 5C* C327 C32716 C32725 C32740 BC807_BC807W_BC327_6 Product data sheet Rev. 06 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 3 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation BC807 BC807W BC327 storage temperature junction temperature ambient temperature open emitter open base; IC = 10 mA open collector Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C - - [1][2] [1][2] [1][2] - −65 −65 Max Unit −50 V −45 V −5 V −500 mA −1 A −200 mA 250 mW 200 mW 625 mW +150 °C 150 °C +150 °C [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient BC807 BC807W BC327 Conditions Tamb ≤ 25 °C Tamb ≤ 25 °C Tamb ≤ 25 °C Min Typ Max Unit [1][2] - - 500 K/W [1][2] - - 625 K/W [1][2] - - 200 K/W [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups. BC807_BC807W_BC327_6 Product data sheet Rev. 06 — 17 November 2009 © NXP B.V. 2009. All rights reserved. 4 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current IEBO hFE hFE VCEsat VBE Cc fT emitter-base cut-off current DC current gain BC807; BC807W; BC327 BC807-16; BC807-16W; BC327-16 BC807-25; BC807-25W; BC327-25 BC807-40; BC807-40W; BC327-40 DC current gain collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency Conditions IE = 0 A; VCB = −20 V IE = 0 A; VCB = −20 V; Tj = 150 °C IC = 0 A; VEB = −5 V IC = −100 mA; VCE = −1 V IC = −500 mA; VCE = −1 V IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −1 V IE = ie = 0 A; VCB = −10 V; f = 1 M.


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