DTS2302

N-Channel 20 V (D-S) MOSFET DTS2302 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. 0.026 at VGS = 4.5 V 0.033 at VGS = 2.5 V ID (A) 2.9 2.6 Qg (Typ.) 3.5 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching for Portable Devices DC/DC Converter (SOT-23) G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs)b TA = 25 °C TA = 70 °C ID IDM 2.9 2.6 2.3 2.1 10 Continuous Source Current (Diode Conduction)a IS 0.72 0.6 Power Dissipationa TA = 25 °C TA = 70 °C PD 0.86 0.55 0.71 0.46 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Ju...