DTS2312

N-Channel 20 V (D-S) MOSFET DTS2312 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = 4.5 V 20 0.045 at VGS = 2.5 V 0.051 at VGS = 1.8 V ID (A)e 3.8 3.6 2.6 Qg (Typ.) 8.8 nC SOT-23 G1 S2 3D Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 20 ±8 3.8 3.1 3.8 3...