Document
N-Channel 30-V (D-S) MOSFET
DTS3402
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) 0.023 at VGS = 10 V 0.025 at VGS = 4.5 V
ID (A)a 5.6 4.6
Qg (Typ.) 2.9 nC
(SOT-23)
G1 S2
3D
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
30
± 20
5.6a 4.3 3.3
2.7 17 1.9 0.9b, c 1.8 1.2 1.1b, c 0.7b, c - 55.