DTS3406

N-Channel 30-V (D-S) MOSFET DTS3406 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.021 at VGS = 10 V 30 0.023 at VGS = 4.5 V ID (A)a 5.8 4.6 Qg (Typ.) 1.9 nC SOT-23 G1 S2 3D Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 20 5.8a 4.1 5.3 4.7 17 5.2 0.9b, c 1.7 1.1 1.1b, c 0.7b, c - 55 ...