DTS4500

N-Channel 40 V (D-S) MOSFET DTS4500 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () 0.040 at VGS = 10 V 40 0.055 at VGS = 4.5 V ID (A)a 3.6 3.1 Qg (Typ.) 2.9 nC TO-236 (SOT-23) G1 S2 3D D G FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Load Switch Portable and Consumer Applications Top View DTS4500 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperatur...