Document
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
20 0.171 at VGS = 4.5 V 0.230 at VGS = 2.5 V
ID (A) c 1.6
1.3
Qg (TYP.) 1.4 nC
SOT-523
D
FEATURES • TrenchFET® power MOSFET • 100 % Rg tested
APPLICATIONS • Smart phones, tablet PC’s
- DC/DC converters - Boost converters
- Load switch, OVP switch
G1
3D
G
S2 Top View
S
DTS5012
www.din-tek.jp
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
LIMIT 20 ±8 1.8 1.5
1.5 a, b 1.2 a, b
6 0.4 0.3 0.5 0.3 0.4 a, b 0.3 a, b -55 to +150 260
THERMAL RES.