DTS8205

Dual N-Channel MOSFET DTS8205 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.018 at VGS = 4.5 V 0.023 at VGS = 2.5 V ID (A) 5.6 4.5 FEATURES Halogen-free Option Available TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT TSOP6 Top View S1 D1/D2 S2 16 25 34 G1 D1/D2 G2 DD G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 5.6 4.2 4.5 2.5 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.0 0.96 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. t ≤ 10 s Steady...