DTU120N04

N-Channel 0-V (D-S) MOSFET '781 ZZZGLQWHNMS PRODUCT SUMMARY VDS (V)  RDS(on) (:) 0.00 at VGS = 10 V 0.00 at VGS = 4.5 V TO-252 ID (A)a, e   Qg (Typ)  nC D FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU APPLICATIONS OR-ing Server DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 0 ± 20 a, e 0e .8b, c 2b, c 0   0a, e 3.3b, c 5...