DTU20N20

N-Channel 200 V (D-S) MOSFET DTU20N20 www.din-tek.jp PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.048 at VGS = 10 V ID (A) 20 TO-252 D FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 20 11 60 19 19 18 136b 3a - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface mounted on ...