Document
P-Channel 100-V (D-S) MOSFET
DTL19P10
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.120 at VGS = - 10 V 0.160 at VGS = - 4.5V
ID (A) - 19 - 15.7
Qg (Typ.) 16.5 nC
FEATURES
• Halogen-free Option Available • TrenchFET® Power MOSFET
• UIS and Rg Tested
RoHS
COMPLIANT
TO-251
APPLICATIONS • Active Clamp in Intermediate DC/DC Power Supplies
S
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
ID IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
IS
IAS EAS
Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
PD TJ, Tstg
Soldering Recommendations (Peak Temperature)
Notes: a. Surface .