DTL50P03

P-Channel 30 V (D-S) MOSFET DTL50P03 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 30 0.010 at VGS = - 10 V 0.015 at VGS =- 4.5 V TO-251 ID (A) - 50d - 50d Qg (Typ.) 43.1 nC S G FEATURES TrenchFET® Power MOSFET Low On-Resistance for Low Voltage Drop Extended VGS max. Rating: 25 V 100 % Rg and UIS Tested APPLICATIONS Battery, Load and Adaptor Switches - Notebook Computers - Notebook Battery Packs D GDS Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 100 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature ...