DTM4437

P-Channel 30-V (D-S) MOSFET DTM4437 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at VGS = - 4.5 V ID (A)d - 9.0 - 7.8 Qg (Typ.) 13 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS Load Switch Battery Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 20 - 9.0 - 7.2 - 7.0a, b - 5.6a, b - 30 - 3.5 - 2.1a, b 4.2 2.7 2.5a, b 1.6a, b - 55 to 150 THERMAL RESISTAN...