DTM4955

Dual P-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) per leg Configuration - 25 0.051 0.063 -5.4 Dual FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested DTM4955 www.din-tek.jp SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 25 ± 12 - 5.4 - 3.8 -3 - 26 - 17 14 3.3 1.1 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambien...