DTM6061

P-Channel 60-V (D-S) MOSFET DTM6061 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.049 at VGS = - 10 V 0.059 at VGS = - 4.5 V ID (A)a -6 -5 Qg (Typ.) 7.6 nC FEATURES TrenchFET® Power MOSFET 100 % UIS Tested APPLICATIONS Load Switch SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 20 - 6a - 5.5 5.2b - 4.1b - 18 - 4.5 10.1 5.9a 3.1b 7.4a 4.6a 1.1b 2b - 55 to 150 THERMAL RESISTANCE RATING...