DTM6917

P-Channel 100 V (D-S) MOSFET DTM6917 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. 0.195 at VGS = - 10 V 0.200 at VGS = - 7.5 V 0.207 at VGS = - 6 V ID (A) - 5.8 - 5.7 - 5.6 Qg (Typ.) 12 S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Motor Control S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 100 ± 20 - 5.8 - 5.1 - 17.4 - 12 12.2 32.1b 2.5 - 55 to 150 THERMAL RESISTANC...