DTM9435

P-Channel 30-V (D-S) MOSFET DTM9435 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.042 at VGS = - 10 V - 30 0.055 at VGS = - 6 V 0.060 at VGS = - 4.5 V ID (A) - 5.8 - 5.0 - 4.4 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.8 - 4.6 - 4.1 - 3.2 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.6 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junctio...