BC807U
PNP Silicon Transistor Array
For AF input stages and driver applications High current gain Low collector-em...
BC807U
PNP Silicon
Transistor Array
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated
Transistors
5 6
4
3 2 1
VPW09197
with good matching in one package
C1 6
B2 5
E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07175
Type BC807U
Maximum Ratings Parameter
Marking 5Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 45 50 5 500 1 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 115 °C Junction temperature Storage temperature
mA A mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
105
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC807U
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V IC = 500 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter satur...
