Semiconductor
BC808
PNP Silicon Transistor
Descriptions
• High current application • Switching application
Features
•...
Semiconductor
BC808
PNP Silicon
Transistor
Descriptions
High current application Switching application
Features
Suitable for AF-Driver stage and low power output stages Complementary pair with BC818
Ordering Information
Type NO. BC808 Marking MA : hFE rank Package Code SOT-23
Outline Dimensions
2.4±0.1 1.30±0.1
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
2.9±0.1
1.12 Max.
0~0.1
KST-2025-000
0.124
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
-0.03 +0.05
1
BC808
(Ta=25°C)
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-30 -25 -5 -800 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter Turn On voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob
Test Condition
IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-25 100 100 16 -1.2 -700 -100 630 -
Unit
V V mV nA MHz pF
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-2025-000
2
BC808
Electrical Characteristic Curves
Fig. 1 Pc-Ta Fig. 2 IC -VBE
Fig....