BC807W, BC808W
PNP Silicon AF Transistors
For general AF applications High collector current High current gain L...
BC807W, BC808W
PNP Silicon AF
Transistors
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (
NPN)
3
2 1
VSO05561
Type BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W BC808-40W
Maximum Ratings Parameter
Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
Symbol VCEO VCBO VEBO
BC 807W 45 50 5 500 1 100 200 250 150
BC 808W 25 30 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW °C
-65 ... 150
Thermal Resistance Junction - soldering point 1) RthJS
80
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC807W, BC808W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-g...
