BC808W

BC 807W / BC 808W PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2±0.1 0.3 3 225 mW SOT-323 0.01 g 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Coll. current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open B shorted E open C open - VCE0 - VCES - VCB0 - VEB0 Ptot - IC - ICM - IBM IEM Tj TS 2.1±0.1 Grenzwerte (TA = 25/C) BC 807W 45 V 50 V 50 V 5V 225 mW 1) 500 mA 1000 mA 200 mA 1000 mA 150/C - 65…+ 150/C BC 808W 25 V 30 V 30 V Characteristics, Tj = 25/C Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA - VCE = 1 V, - IC = 100 mA BC807W BC808W Group -16W Group -25W Group -40W hFE hFE hFE hFE hFE 100 40 100 160 250 Kennwerte, Tj = 25/C Typ. – – 160 250 400 Max. 600 – 250 400 600 1 ) Mounted...