DatasheetsPDF.com

BC817-16 Datasheet PDF

Micro Commercial Components

Posted Mar 23, 2005 (Stock #: 128722)



Part Number BC817-16
Manufacturers Micro Commercial Components
Description NPN Small Signal Transistor
Datasheet Web ViewView BC817-16 Datasheet
Download File DownloadBC817-16 PDF File
Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) BC817-16 THRU BC817-40 NPN Small Signal Transistor 300mW Maximum Ratings • Operating Junction Temperature Range: -55℃ to +150
More View ℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 417 ℃/W Junction to Ambient SOT-23 A D Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation@Ts=50℃( Note2) Symbol VCBO VCEO VEBO IC ICM PC Rating Unit 50 V 45 V 5 V 500 mA 1000 mA 300 mW Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Device mounted on Ceramic Substrate 0.7mm X 2.5cm2 area Internal Structure C B E Marking: BC817-16: 6A BC817-25: 6B BC817-40: 6C F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 NOTE Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 2.000 inches mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COM BC817-16 THRU BC817-40 Electrical Characteristics @ 25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage(Note3) V(BR)CEO 45 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=1µA, IC=0 Collector Cutoff Current ICBO 0.1 μA VCB=45V, IE=0 Emitter-Base Cutoff Current IEBO 0.1 μA VEB=4V, IC=0 DC Current Gain(Note3) Collector-Emitter Saturation Voltage hFE1 hFE2 VCE(sat) 100 40 600 VCE=1V, IC=100mA VCE=1V, IC=500mA 0.7 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=500mA, IB=50mA Base-Emitter Voltage VBE 1.2 V VCE=1V, IC=500mA Collecter capactiance Cob 10 pF VCB=10V, f=1MHz, Transition Frequency fT 100 MHz VCE=5V, IC=10mA, f=100MHz Note: 3. Pulse Width ≤ 300μs, Duty Cycle≤2.0% CLASSIFICATION OF hFE (1) Rank Range BC817-16 100-250 BC817-25 160-400 BC817-40 250-600 Rev.3-3-12012020 2/4 MCCSEMI.COM Collector Current (mA) Collector-Emitter Saturation Voltage (mV) Curve Characteristics Fig. 1 - Static Characteristics 280 COMMON EMITTER T =25°C A 240 1mA 0.9mA 0.8mA 200 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 0.2mA 40 I = 0.1mA B 0 0 2 4 6 8 10 12 14 16 Collector-Emitter Voltage (V) Fig. 3 - Collector-Emitt
  BC817-16   BC817-16





Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)