BC817-16 Datasheet PDF
Posted Mar 23, 2005 (Stock #: 128722)
Features
• Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
BC817-16 THRU BC817-40
NPN Small Signal Transistor
300mW
Maximum Ratings
• Operating Junction Temperature Range: -55℃ to +150
More View
℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 417 ℃/W Junction to Ambient
SOT-23
A D
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation@Ts=50℃( Note2)
Symbol
VCBO VCEO VEBO
IC ICM PC
Rating Unit
50
V
45
V
5
V
500
mA
1000 mA
300
mW
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. Device mounted on Ceramic Substrate 0.7mm X 2.5cm2 area
Internal Structure
C
B
E
Marking: BC817-16: 6A BC817-25: 6B BC817-40: 6C
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.014 0.020 0.35 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031 0.800
0.035 0.900
0.079 2.000
inches mm
0.037 0.950
0.037 0.950
Rev.3-3-12012020
1/4
MCCSEMI.COM
BC817-16 THRU BC817-40
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Symbol Min Typ Max Units
Conditions
Collector-Base Breakdown Voltage
V(BR)CBO 50
V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage(Note3) V(BR)CEO 45
V IC=10mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
V IE=1µA, IC=0
Collector Cutoff Current
ICBO
0.1
μA VCB=45V, IE=0
Emitter-Base Cutoff Current
IEBO
0.1
μA VEB=4V, IC=0
DC Current Gain(Note3) Collector-Emitter Saturation Voltage
hFE1 hFE2 VCE(sat)
100 40
600
VCE=1V, IC=100mA
VCE=1V, IC=500mA
0.7
V IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
1.2
V IC=500mA, IB=50mA
Base-Emitter Voltage
VBE
1.2
V VCE=1V, IC=500mA
Collecter capactiance
Cob
10
pF VCB=10V, f=1MHz,
Transition Frequency
fT
100
MHz VCE=5V, IC=10mA, f=100MHz
Note: 3. Pulse Width ≤ 300μs, Duty Cycle≤2.0%
CLASSIFICATION OF hFE (1)
Rank
Range
BC817-16 100-250
BC817-25 160-400
BC817-40 250-600
Rev.3-3-12012020
2/4
MCCSEMI.COM
Collector Current (mA)
Collector-Emitter Saturation Voltage (mV)
Curve Characteristics
Fig. 1 - Static Characteristics
280 COMMON EMITTER T =25°C
A
240
1mA 0.9mA 0.8mA
200
0.7mA
0.6mA
160
0.5mA
120
0.4mA
0.3mA
80
0.2mA
40
I = 0.1mA
B
0
0
2
4
6
8
10
12
14
16
Collector-Emitter Voltage (V)
Fig. 3 - Collector-Emitt
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