DTS5011

P-Channel 20-V (D-S) MOSFET DTS5011 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.066 at VGS = - 4.5 V 0.086 at VGS = - 2.5 V ID (A)d - 3.8 - 3.3 Qg (Typ.) 9 nC SOT-523 G1 S2 3D Top View S G D P-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices DC/DC Converter ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 20 ± 12 - 3.8 - 3.0 - 2.8a, b - 2.2a, b...