DTS3419

P-Channel 20 V (D-S) MOSFET DTS34 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0320 at VGS = - 4.5 V - 20 0.0410 at VGS = - 2.5 V 0.0675 at VGS = - 1.8 V ID (A)a - 5.9 - 5.2 - 4.3 Qg (Typ.) 13.8 nC SOT-23 G 1 S2 3D G S FEATURES TrenchFET® Power MOSFET 100 % Rg Tested Built-in ESD Protection - Typical ESD Performance 3000 V APPLICATIONS Power Management for Portable and Consumer - Load Switches - DC/DC Converters Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °...