DTS2315

New P-Channel 20 V (D-S) MOSFET DTS2315 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. 0.045 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V ID (A)a - 5.5 - 3.7 Qg (Typ.) 13.8 nC FEATURES TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS Power Management for Portable and Consumer - Load Switches - DC/DC Converters (SOT-23) G1 S2 3D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit - 20 ± 12 - 5.5 - 3.7 - 3.5b, c - 2.6b, c - 18 - 2.4 - 1b, c 1.7 ...